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对相同条件下制备的不同晶向的锑化镓抛光晶片表面化学组分进行了XPS测试比较,结果表明(110)GaSb晶片表面的氧化程度最为严重,表面极为粗糙;有极性的(111)GaSb晶面由于Ga—Sb价键存在于衬底内部,反而氧化程度较低,表面较光滑。分析比较了GaSb晶面表面化学组分与形貌的关系。
The results of XPS test show that the surface of (110) GaSb wafer has the most serious oxidation and the surface is very rough. The polar (111) GaSb crystal face due to the presence of Ga-Sb valence bond within the substrate, but a lower degree of oxidation, the surface is relatively smooth. The relationship between the chemical composition of GaSb surface and the morphology was analyzed and compared.