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本文对实现高频晶体管低噪声化的技术在理论上进行若干探讨,其次叙述满足这些理论要求的技术对策和现在的技术进展程度,然后预测高频晶体管低噪声化的今后发展。高频晶体管的噪声系数在讨论电子器件的噪声时,最常采用噪声系数这个参数,当电气信号通过象晶体管放大器等处理电信号的器件时,噪声系数就是表征这一信号的信噪比劣化程度的参数,可表示如下:
In this paper, some theoretical discussions are made on how to realize low-noise high-frequency transistors. The second part describes the technical measures to meet these theoretical requirements and the current state of the art, and then predicts the future development of high-frequency transistors with low noise. The noise figure of high-frequency transistors When discussing the noise of electronic devices, the parameter of noise figure is most often used. When the electrical signal is passed through a device such as a transistor amplifier to process the electrical signal, the noise figure is the degree of deterioration of the signal- The parameters can be expressed as follows: