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基于辉光放电原理在超高本底真空下制备了 Ｎｉ８１Ｆｅ１９（１２ｎｍ）超薄薄膜，其各向异性磁电阻（ＡＭＲ）变化率达到 １．２％，而矫顽力却只有１２７ Ａ／ｍ．同较低本底真空下制备的 Ｎｉ８１Ｆｅ１９薄膜进行结构比较表明：超高本底真空下制备的Ｎｉ８１Ｆｅ１９薄膜表面光滑、平整、起伏小，薄膜致密，结构缺陷较少；而较低本底真空下制备的Ｎｉ８１Ｆｅ１９薄膜表面粗糙、起伏大，薄膜较疏松、不均匀，结构缺陷较多．
Ni81Fe19 (12nm) ultrathin films were prepared under ultrahigh background vacuum based on the principle of glow discharge. The anisotropic magnetic resistance (AMR) change rate was 1.2% and the coercive force was only 127 A / m. The structure comparison of Ni81Fe19 thin films prepared under the lower background vacuum shows that the surface of Ni81Fe19 thin films prepared under ultra-high background vacuum is smooth, smooth, less undulating, thin-film dense and less structural defects; while the lower background vacuum preparation Ni81Fe19 thin film surface roughness, ups and downs, the film is more loose, uneven, more structural defects.