把MOS器件的工作原理和一些材料的电化学性能相结合,可制成一种化学敏感场效应晶体管.这是一种很有广泛用途的敏感器件,其栅二氧化硅膜除本身可作为氢离子敏感膜以外,与其它敏感膜相结合,可以作成种类繁多的敏感器件.从敏感器件本身的制造来说,生长良好的SiO_2膜是至关重要的工艺,HCl氧化虽能得到较好的结果.但HCl吸水后,有很强的腐蚀性,对氧化管道和仪器设备破坏性很 Combining the working principle of MOS devices with the electrochemical performance of some materials, a chemically sensitive field-effect transistor can be made, which is a very sensitive device for a wide range of uses, with the gate silicon dioxide film itself as hydrogen In addition to the ion-sensitive membrane, in combination with other sensitive membranes, a wide variety of sensitive devices can be made.A well-grown SiO 2 membrane is a crucial process from the fabrication of the sensitive device itself, and HCl oxidation provides good results However, HCl water absorption, there is a strong corrosive, very damaging for the oxidation of pipes and equipment