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采用ANSYS有限元分析软件中热分析结构单元,对聚合物电致发光二极管(PLED)在光强为1000cd/m2时的热特性进行模拟,获得其温度场、热流分布及温度梯度的分布图,从仿真结果知PLED器件的最高温度为45.968℃,处于PFO-BT发光层,最低温度为45.95℃,处于石英玻璃基底末端.计算得出聚合物发光器件总热阻为1305℃/W,聚合物发光层至石英玻璃基底末端热阻为1℃/W.通过改变PLED器件输入功率、基底材料以及基底厚度3个参数,分别模拟得出其对PLED器件热特性的影响,仿真结果表明器件最高温度TH与输入功率P显现良好的线性关系;不同基底材料对器件温度影响小,负极端为器件主要散热通径;当基底厚度不断增加时,PLED器件最高温度随着增加,而最低温度不断减少,器件总热阻基本不变,发光层至石英基底末端热阻线性增大.
The thermal characteristics of polymer electroluminescent diode (PLED) at 1000 cd / m 2 were simulated by ANSYS finite element analysis software. The temperature field, heat flow distribution and temperature gradient distribution were obtained. From the simulation results, we know that the maximum temperature of PLED device is 45.968 ℃, the temperature of PFO-BT is 45.95 ℃, and the temperature of PLED device is at the end of quartz glass substrate.The total thermal resistance of PLED device is 1305 ℃ / W, The thermal resistance of the luminescent layer to the end of the quartz glass substrate is 1 ℃ / W. The influence of PLED device thermal characteristics is simulated by changing the input power, the base material and the substrate thickness of the PLED device respectively. The simulation results show that the maximum temperature of the device TH and input power P showed a good linear relationship; different substrate materials have a small effect on the device temperature, the negative terminal is the main cooling path of the device; when the substrate thickness increases, the maximum temperature of the PLED device increases while the minimum temperature decreases, The total thermal resistance of the device is basically unchanged, the thermal resistance of the light emitting layer to the end of the quartz substrate increases linearly.