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利用等离子体化学气相沉积制备了SnO_2导电薄膜,分析了膜的电学性能与沉积参数的关系,同时测得SnO_2膜具有负温阻特性,这是一种N型半导体膜。
SnO_2 conductive films were prepared by plasma chemical vapor deposition. The relationship between the electrical properties and the deposition parameters was analyzed. Meanwhile, the SnO_2 film has a negative temperature resistance characteristic, which is an N-type semiconductor film.