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GaAs集成电路因其良好的电性能和抗辐射能力,广泛应用于各领域,尤其是航天航空方面。电路的抗辐射能力与设计和工艺密切相关,因此对3 bit GaAs加权相加电路进行了全面的辐照效应试验技术研究,主要对该电路进行中子、γ总剂量和γ剂量率辐照试验研究,对GaAs集成电路的耐辐照性进行了探讨,为建立中等规模耐辐射GaAs IC的电路设计、工艺制造和测试技术平台奠定了基础。
GaAs integrated circuits are widely used in various fields, especially aerospace, because of their good electrical properties and radiation resistance. The radiation resistance of the circuit is closely related to the design and the process. Therefore, a comprehensive experimental study on the radiation effect of the 3-bit GaAs weighted-sum circuit has been carried out. The neutron, γ total dose and γ dose rate irradiation experiments Researching on the radiation resistance of GaAs integrated circuits, laying a foundation for establishing a circuit design, process manufacturing and testing technology platform for medium-sized radiation-resistant GaAs ICs.