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报导了适用于制造场效应晶体管的砷化镓分子束外延生长。分子束外延结构由一个 n=3.5×10~(17)/厘米~3的有源层和长在它上面的一个 n~+=2.5×10~(18)/厘米~3的接触层组成。用这种材料制造的场效应晶体管在8千兆赫下的最小噪声系数为1.5分贝;相应的增益为15分贝。这是目前报导过的有关低噪声分子束外延砷化镓场效应晶体管的最好结果。
Reported gallium arsenide molecular beam epitaxy suitable for fabricating field effect transistors. The molecular beam epitaxy consists of an active layer of n = 3.5 × 10 17 / cm 3 and a contact layer of n ~ + = 2.5 × 10 18 / cm 3 formed on it. Field effect transistors made with this material have a minimum noise figure of 1.5 dB at 8 GHz; the corresponding gain is 15 dB. This is the best result reported so far about low-noise molecular beam epitaxial GaAs FETs.