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从理论上系统性地研究了动态气体锁抑制率,提出了动态气体锁理论分析模型。通过理论分析推导出单组分和多组分清洁气体在等截面或者变截面条件下的动态气体锁抑制率解析表达式,并对单组分清洁气体在等截面和变截面条件下的动态气体锁抑制率进行了比较。研究结果表明,当抑制率为85%以上时,可以近似地使用等截面假设来计算动态气体锁抑制率,且应以清洁气体出口处截面面积作为动态气体锁平均截面面积;动态气体锁抑制率与动态气体锁结构以及清洁气体相关量值有关,当给定动态气体锁结构和扩散系数时,动态气体锁抑制率随着向硅片台腔室扩散的气体体积流量的增大而增大。该动态气体锁抑制率理论研究体系,能够为极紫外(EUV)光刻机动态气体锁的研制提供理论依据。
The dynamic gas lock inhibition rate was systematically studied in theory, and a dynamic gas lock theory analysis model was proposed. The analytic expression of dynamic gas lock-up inhibition ratio of single-component and multi-component cleaning gas under equal or variable cross-section conditions is deduced through theoretical analysis. The dynamic gas with single-component and multi-component cleaning gas under constant and constant cross-sectional conditions Lock inhibition rates were compared. The results show that when the inhibition rate is above 85%, the dynamic gas lock-up inhibition rate can be approximated using the assumption of equal section, and the cross-sectional area at the outlet of the clean gas should be taken as the average cross-sectional area of the dynamic gas lock. With the dynamic gas lock structure and the related value of the cleaning gas, the dynamic gas lock-up inhibition rate increases with the increase of gas volume flow to the wafer stage chamber when the dynamic gas lock structure and diffusion coefficient are given. The dynamic gas lock inhibition rate theoretical research system can provide a theoretical basis for the development of a dynamic ultraviolet gas (EUV) lithography dynamic gas lock.