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介绍了一个基于0.35μm SiGe BiCMOS工艺的2.5GHz低相位噪声LC压控振荡器.文章重新定义了压控振荡器工作区域.分析表明谐振回路的电感值和偏置电流对振荡器的相噪优化有重要的影响.本文同时分析了CMOS和BJT压控振荡器设计思路的不同.本设计中,采用键合线来实现谐振回路中的电感来进一步提高相噪性能.该VCO和其他模块集成在一起实现了一个环路带宽为30kHz的频率综合器.测试结果表明,当中心频率为2.5GHz时,在100kHz和1MHz的频偏处相噪分别为-95dBc/Hz和-116dBc/Hz.工作电压为3 V时,VCO核心电路的电流消耗为8mA.据我们所知,这是国内第一个采用Si Ge BiCMOS工艺的差分压控振荡器.
A 2.5GHz low phase noise LC voltage controlled oscillator based on a 0.35μm SiGe BiCMOS process is introduced. The article redefines the working area of the VCO. The analysis shows that the inductance and bias current of the resonant circuit optimize the phase noise of the oscillator Has important influence.This paper also analyzes the different design ideas of CMOS and BJT voltage-controlled oscillator.In this design, the bonding wire is used to realize the inductance in the resonant circuit to further improve the phase noise performance.The VCO and other modules are integrated in And a frequency synthesizer with a loop bandwidth of 30kHz is realized.The test results show that the phase noise at the frequency offset of 100kHz and 1MHz are -95dBc / Hz and -116dBc / Hz respectively when the center frequency is 2.5GHz. The current consumption of the VCO core is 8mA at 3 V. To our knowledge, this is the first differential voltage-controlled oscillator in the country to use the SiGe BiCMOS process.