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本文研究了掺有不同浓度锗的直拉硅（ＣＺＳｉ）在温度３５０℃～５５０℃等时退火后的光致发光谱（ＰＬ谱）。结果发现：杂质锗使硅材料的本征激发峰强度增加，ＰＬ谱随着锗浓度的增加，峰位向低能端移动，ＰＬ峰变宽。实验也表明：随着退火温度的升高，在ＰＬ谱的低能端出现了新的激发峰，锗的存在推迟和抑制了新的激发峰的产生；与不掺锗的直拉硅相比，锗并没有在硅中引入新的深能级。
In this paper, the photoluminescence spectra (PL spectra) of CZSi doped with different concentrations of germanium after isothermal annealing at 350 ℃ ~ 550 ℃ were investigated. The results show that the impurity germanium increases the intrinsic peak intensity of the silicon material. As the germanium concentration increases, the PL peak shifts to the low energy side and the PL peak broadens. The experimental results also show that as the annealing temperature increases, a new excitation peak appears at the low energy end of the PL spectrum, and the existence of germanium delays and inhibits the generation of new excitation peaks. Compared with the silicon without C-Si, Germanium does not introduce new deep levels in silicon.