用于超高速LSI器件的砷化镓结构、具有极小延迟的特殊加工的约瑟夫逊结器件以及许多MOS器件的进展在国际电子器件会议上所报告的重要发明中名列前茅。其他几项进展也将在哥伦比亚特区华盛顿引起震动,例如实现亚微米条宽和高稳定的肖特基势垒二极管的技术将引入注目。 采用通常被看作最高速的半导体器件 GaAs structures for ultra-high-speed LSI devices, specially-fabricated Josephson-junction devices with little delay, and advances in many MOS devices are among the top innovations reported at the International Electronics Meeting. Several other developments will also cause shocks in Washington, DC, such as the notability of technology for Schottky barrier diodes with sub-micron wide and high stability. Use is usually regarded as the fastest high-speed semiconductor devices