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Vishay Intertechnology公司日前宣布推出采用小型Power PAK 1212—8封装的业界首款200V功率MOSFET器件。该器件封装的面积为3.3mm×3.3mm,高度仅为1.07mm,其在提供极为卓越的热性能的同时提供了比SO—8解决方案更小的尺寸。Power PAK 1212—8封装的功率消耗为3.8W,几乎是任何具有TSSOP—8封装尺寸或更小尺寸的MOSFET器件的两倍。该封装典型的热阻仅为1.9℃/W,而SO—8的为16℃/w。除空间节约及其高电压性能外,Si7820DN还具备240mΩ的导通电阻和12.1nC的栅极电荷。新型功率MOSFET的工作结温和存放温度范围规定为—55℃～+150℃。
Vishay Intertechnology Inc. today announced the industry’s first 200V power MOSFET device in a small Power PAK 1212-8 package. The device has an area of 3.3mm × 3.3mm and a height of only 1.07mm. It offers extremely small thermals and offers a smaller footprint than the SO-8 solution. The Power PAK 1212-8 package consumes 3.8W of power, nearly double the size of any MOSFET device with a TSSOP-8 package size or smaller. The typical thermal resistance of the package is only 1.9 ℃ / W, while the SO-8 is 16 ℃ / w. In addition to space savings and its high voltage capability, the Si7820DN features 240mΩ on-resistance and 12.1nC gate charge. Operating junction temperature and storage temperature range of the new power MOSFET is -55 ℃ ~ + 150 ℃.