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本工作用IR法研究了a·Si_(1-x)Cx:H(x~0.2)膜中掺杂(B和P)对H键合特性的影响,并对样品含H量作了定量分析.
In this work, the influence of doping (B and P) on the H-bonding properties of a-Si_ (1-x) Cx: H (x ~ 0.2) films was investigated by IR method and the content of H in the samples was quantitatively analyzed .