论文部分内容阅读
提出了一种采用低能量大剂量 He离子注入局域寿命控制的高速 L IGBT,并对其进行了实验研究 .粒子辐照实验结果显示与常规的 L IGBT相比较 ,该器件的关断时间和正向压降的折中关系得到了改善 .同时研究了当局域寿命控制区位于 p+ - n结附近 ,甚至在 p+阳极内时 ,该器件的正向压降和关断时间 .结果显示当局域寿命控制区在p+ 阳极内时 ,仍然对关断时间和正向压降有影响
A high-speed L IGBT with low-energy and high-dose He ion implantation for local lifetime control was proposed and experimentally studied.The experimental results of particle irradiation showed that the turn-off time and positive The compromise between the voltage drop and the p + - n junction is improved, and the forward voltage drop and turn - off time of the device are also studied when the local lifetime control region is near the p + - n junction and even within the p + anode. When the control zone is in the p + anode, it still affects the turn-off time and the forward voltage drop