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在研究分析弛豫SiGe衬底上的应变Si沟道nMOSFET纵向电势分布的基础上,建立了应变Si nMOSFET阈值电压模型,并利用该模型对不同的器件结构参数进行仿真,获得了阈值电压与SiGe层掺杂浓度和Ge组分的关系、阈值电压偏移量与SiGe层中Ge组分的关系、阈值电压与应变Si层掺杂浓度和厚度的关系.分析结果表明:阈值电压随SiGe层中Ge组分的提高而降低,随着SiGe层的掺杂浓度的提高而增大;阈值电压随应变Si层的掺杂浓度的提高而增大,随应变Si层厚度增大而增大.该模型为应变Si器件阈值电压设计提供了重要参考.
Based on the study of the longitudinal potential distribution of strained Si channel nMOSFET on the relaxed SiGe substrate, a threshold voltage model of strained Si nMOSFET was established and the parameters of different device structures were simulated by this model. The relationship between threshold voltage and SiGe The relationship between the doping concentration and the Ge composition, the relationship between the threshold voltage shift and the Ge composition in the SiGe layer, the relationship between the threshold voltage and the doping concentration and the thickness of the strained Si layer, Ge composition increases and decreases with the increasing of the doping concentration of SiGe layer; the threshold voltage increases with the increase of doping concentration of strained Si layer, and increases with the thickness of strained Si layer. The model provides an important reference for designing the threshold voltage of strained Si devices.