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为了实现In Ga As探测器响应波段向可见增强,在传统的外延材料中加入一层In Ga As腐蚀阻挡层,制备了32×32元平面型In Ga As面阵探测器,采用机械抛光和化学湿法腐蚀相结合的方法,去除了In P衬底.结果表明,探测器的响应波段为0.5~1.7μm,室温下在波长为500 nm处的量子效率约为16%,850 nm处量子效率约为54%,1 550 nm处量子效率约为91%.暗电流大小与衬底减薄之前基本保持一致.理论分析了材料参数对器件量子效率的影响,为进一步优化可见波段探测器的量子效率提供了依据.
In order to achieve the visible enhancement of the In GaAs detector response band, a 32 × 32-element planar In Ga As surface-array detector was fabricated by adding a layer of In Ga As etching barrier to the conventional epitaxial material. The mechanical polishing and chemical Wet etching, the In P substrate is removed.The results show that the detector has a response band of 0.5-1.7 μm, a quantum efficiency of about 16% at a wavelength of 500 nm at room temperature and a quantum efficiency of 850 nm About 54%, and the quantum efficiency at 9150 nm is about 91%. The size of the dark current is basically consistent with that before the substrate thinning.The effect of material parameters on the quantum efficiency of the device is theoretically analyzed. In order to further optimize the quantum detector Efficiency provides the basis.