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用电子回旋共振化学气相沉积 (ECRCVD)方法制备了纳米碳化硅薄膜 .实验中发现 :在高氢稀释反应气体和高微波功率条件下 ,可以得到结构上具有纳米碳化硅晶粒镶嵌在碳化硅无序网络中的薄膜 .用高分辩透射电子显微镜、傅里叶红外吸收谱、Ram an散射和 X射线光电子谱等分析手段对薄膜的结构进行了分析 .在室温条件下 ,薄膜能够发出强烈的短波长可见光 ,发光峰位于能量为 2 .6 4 e V处 .瞬态光谱研究表明样品的光致发光寿命为纳秒数量级 ,表现出直接跃迁复合的特征 .这种材料有希望在大面积平面显示器件中得到应用
The nanocrystalline silicon carbide films were prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) method. The experimental results show that under the condition of high hydrogen dilution reaction gas and high microwave power, The structure of the film was analyzed by high resolution transmission electron microscopy, Fourier transform infrared spectroscopy, Ram an scattering and X-ray photoelectron spectroscopy. At room temperature, the film was able to emit a strong short Wavelength of visible light, the luminescence peak at an energy of 2.64 eV Department of transient spectroscopy showed that the sample photoluminescence life of nanoseconds order, showing the characteristics of direct transition complex This material is promising in large area flat display Devices have been applied