论文部分内容阅读
The bonds of metal and carbon don’t form in metal-doped DLC films which be deposited by pulse arc facility for the condition of low temperature and alternate deposition.The hardness and internal stress decreases as the doped content increase,the good luck is that the stress decreases more dramatically.And the friction coefficient increase as the doped content increase.When the Si was doped,Si-C bonds has been formed,and the hardness of films keep constant as the Si content under 6.7%,so the properties of mechanic have been improved by doping Si.The Si doped target be used in film deposition process,atoms of Si and C were deposited at one time,so that the Si-C bond formed.
The bonds of metal and carbon do not form in metal-doped DLC films which be deposited by pulse arc facility for the condition of low temperature and alternate deposition. Hardness and internal stress decreases as the doped content increase, the good luck is that the stress decreases more dramatically. And the friction coefficient increase as the doped content increase. When the Si was doped, the Si-C bonds has been formed, and the hardness of the film keep constant as the Si content under 6.7%, so the properties of mechanic have been improved by doping Si. The Si-doped target be used in film deposition process, atoms of Si and C were deposited at one time, so that the Si-C bond formed.