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电荷耦合器件(CCD)的高敏感性使其易受到激光脉冲的干扰甚至损伤。在理论分析了影响MOS结构光生电荷量因素的基础上,数值仿真了MOS器件的光生电荷量以及响应电压和电流随激光脉宽和平均功率变化的关系;实验研究了CCD对不同参数激光脉冲的光电响应特性。数值仿真表明,MOS器件的光生电荷量以及峰值响应电压和电流随激光脉冲的平均功率和脉宽的增大而增大,并且响应电压和电流有拖尾现象。实验结果显示,脉冲越短,CCD的响应阈值越低。研究结论对超短脉冲激光在光电成像方面的应用具有一定的意义。
The high sensitivity of charge-coupled devices (CCDs) makes them susceptible to laser pulse interference or even damage. Based on the theoretical analysis of the factors that affect the photogenerated charge of MOS structure, the relationship between the photogenerated charge and the response voltage and current of the MOS device are numerically simulated. The effects of CCD on the laser pulse with different parameters Photoelectric response characteristics. Numerical simulations show that the photo-induced charges and the peak response voltage and current of MOS devices increase with the increase of average power and pulse width of laser pulses, and the tailing phenomenon is also observed in response to voltage and current. Experimental results show that the shorter the pulse, the lower the CCD response threshold. The conclusion of the study is of great significance to the application of ultra-short pulse laser in photoelectric imaging.