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本文作者发现一个新的物理现象:HF具有很强的增强氧化功能,微量HF气体(几百-几千ppm)可以成十倍地提高硅氧化速率.从而提出一种硅的低温氧化工艺,即在800℃的低温下掺HF干氧快速生长氧化层,然后进行纯氧后退火.用这种两步工艺生长了200A的薄氧化层,它们具有极好的厚度均匀性和重复性,很少的界面电荷,较强的抗辐射能力,99％的被测电容达到本征击穿,缺陷密度小于2个/cm~2,TEM放大200万倍的照片展示的Si/SiO_2界面无任何明显凹凸不平,这些特性达到或者超过了高温氧化的水平,表明这种工艺具有十分乐观的应用前景.文中提出了掺HF后退火的定性机理,对实验结果作了相应的解释,指出了干氧后退火的意义和这种氧化工艺的特点.
The authors found a new physical phenomenon: HF has a strong oxidation-enhancing function, and trace amounts of HF gas (hundreds to thousands of ppm) can increase the rate of silicon oxidation ten-fold, thereby proposing a low-temperature silicon oxidation process, The HF dry oxide was rapidly doped with HF at a low temperature of 800 ° C and then annealed in pure oxygen. A 200 A thin oxide layer was grown using this two-step process with excellent thickness uniformity and repeatability with very few Of the interface charge, strong anti-radiation ability, 99% of the measured capacitance to achieve intrinsic breakdown, the defect density of less than 2 / cm ~ 2, TEM magnified 200 million times the photo display of the Si / These characteristics meet or exceed the level of high temperature oxidation, indicating that this process has a very optimistic application prospects.In this paper, the qualitative mechanism of post-HF annealing is presented and the experimental results are explained accordingly. It is pointed out that after dry-oxygen annealing The significance and characteristics of this oxidation process.