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利用n型硅作为阴极制备了倒置型顶发射有机发光二极管。通过在n-Si阴极和电子传输层(Alq3)之间插入1nm厚的Ba作为电子注入层,将器件的开启电压从20V降低到9V,并且将器件的效率提高了13倍。器件性能的提高主要是因为1nm厚的Ba有效的降低了电子注入的势垒。
Inverted top-emitting organic light-emitting diodes were fabricated using n-type silicon as a cathode. By inserting 1 nm thick Ba as an electron injection layer between the n-Si cathode and the electron transport layer (Alq3), the turn-on voltage of the device was reduced from 20 V to 9 V and the device efficiency was improved by 13 times. The improvement of device performance is mainly due to the fact that 1 nm thick Ba effectively reduces the potential barrier of electron injection.