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制备了GaN基金属-绝缘层-半导体(MIS)结构紫外探测器,并测量了其暗电流和光谱响应。通过分析其暗电流,发现在反偏情况下,其主要电流输运机制为隧穿复合机制;在正偏情况下,随着偏压的增大,电流输运机制从隧穿机制变为空间电荷限制电流机制。光谱响应测试结果显示,该探测器在-5 V的偏压下,在315 nm处获得了最大响应度170 mA/W,探测度为2.3×1012cm.Hz1/2.W-1。此外,还研究了不同厚度I层对器件光电压的影响,结果表明,光电压受隧穿机制与漏电流机制的共同制约。
A GaN-based metal-insulator-semiconductor (MIS) UV detector was fabricated and its dark current and spectral response were measured. By analyzing its dark current, it is found that the main current transport mechanism is the tunneling recombination mechanism in the case of reverse bias. Under the bias condition, the current transport mechanism changes from tunneling mechanism to space Charge-limiting current mechanism. The results of spectral response tests show that the detector achieves a maximum response of 170 mA / W at 315 nm at a bias voltage of -5 V with a detection of 2.3 × 1012 cm.Hz1 / 2.W-1. In addition, the effects of I-layers with different thickness on the device photovoltage were also studied. The results show that the photo-voltage is controlled by the tunneling mechanism and the leakage current mechanism.