日本理化研究所研究人员在近日的美国《物理评论通讯》杂志网络版上发表论文说,他们发现一种人工合成的镉锇氧化物在特定温度下由导体变为非磁性半导体的原因。这种特性使其能够成为不怕消磁的存储新材料。根据理化研究所日前发表的新闻公报,多数物质在不同温度下其导电性能并不会发生变化,而有些种类的金属氧化物在温度变化时导电性能会发生改 Researchers at the Japan Institute of Physical and Chemical Physics published a paper in a recent online edition of the U.S. Journal of Physical Review and Communication that said they found a reason why a synthetic cadmium-osmium oxide changes from a conductor to a non-magnetic semiconductor at a specific temperature. This feature allows it to become a new material that is not afraid of degaussing storage. According to the press release recently published by the Physical and Chemical Institute, most materials do not change their electrical conductivity at different temperatures. However, some kinds of metal oxides change their conductivity when temperature changes