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提出了一种基于标准CMOS工艺的欠压保护电路,能提供高精度的阈值电压和低温度漂移的上升阈值。在标准CMOS工艺中,利用横向PNP中V_(BE)的负温特性与热电压V_T的正温特性进行相互补偿,实现低的温度漂移特性。同时,欠压保护电路的阈值主要由电阻之间的比例决定,能获得高精度、高集中度的阈值电压,达到量产要求。
An under-voltage protection circuit based on standard CMOS technology is proposed, which can provide high-precision threshold voltage and rising threshold of low-temperature drift. In the standard CMOS process, the negative temperature characteristic of the V_ (BE) in the lateral PNP and the positive temperature characteristic of the thermal voltage V_T are used to compensate each other to achieve a low temperature drift characteristic. At the same time, the undervoltage protection circuit threshold is mainly determined by the ratio between the resistance, to obtain high-precision, high concentration threshold voltage to mass production requirements.