利用磁控溅射和快速热处理的方法制备了Mn,B共掺的多晶硅薄膜(Si0.9654Mn0.0346:B).磁性和结构研究发现薄膜有两个铁磁相.低温铁磁相来源于杂相Mn4Si7,高温铁磁相(居里温度TC~250 K)是由Mn原子掺杂进入Si晶格导致.晶化后的薄膜利用射频等离子体增强化学气相沉积系统(PECVD)进行短暂(4 min)的氢化处理后发现,薄膜的微结构没有发生变化而饱和磁化强度却随着载流子浓度的增大而增大.样品的饱和磁化强度和载流子浓度密切相关为验证在硅基磁半导体中磁性是以空穴为媒介的这一理论提供了有力的证据. The Mn and B codoped polycrystalline silicon thin films (Si0.9654Mn0.0346: B) were prepared by magnetron sputtering and rapid heat treatment. The magnetic and structural studies show that the films have two ferromagnetic phases. Phase Mn4Si7, the high temperature ferromagnetic phase (Curie temperature TC ~ 250 K) is caused by the doping of Mn atoms into the Si lattice, and the crystallized film was transiently applied by PECVD (4 min ) Shows that the microstructure of the film has not changed and the saturation magnetization increases with the increase of the carrier concentration.The saturation magnetization and the carrier concentration of the sample are closely related to verify that the silicon-based magnetism The theory that magnetism is a hole in the semiconductor provides strong evidence.