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FED内部真空中的电场和电子运动受到支撑结构的影响 ,为此采用了有限元法计算带有介质支撑墙的FED电场分布 ;采用龙格 库塔法计算该空间电子轨迹。并且在考虑了介质支撑墙上的二次电子发射之后 ,定性的分析了空间电场电子轨迹及墙上的电荷积累情况。得出了支撑墙对FED电子轨迹影响的数值结果 ,对器件的设计提出了建议。
The electric field and the electron movement in the FED internal vacuum are affected by the supporting structure. For this purpose, the finite element method is used to calculate the electric field distribution of the FED with the dielectric support wall. The electron trajectory is calculated by the Runge-Kutta method. And after considering the secondary electron emission on the dielectric support wall, qualitative analysis of the space electric field electron trajectory and wall charge accumulation situation. The numerical results of the influence of the supporting wall on the FED electron trajectory are obtained, and the design of the device is proposed.