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提出了一种新型的分布串联横向电阻Spindt型FEA的制作工艺。通过溅射的办法制备了各层电极、绝缘层以及FEA电阻层。利用磁增强反应离子刻蚀设备 ,刻蚀出Mo薄膜电极图案和直径 1 μm ,深度 1 μm的SiO2 绝缘层圆孔。利用电子束双源蒸发设备 ,蒸发Al和Mo薄膜 ,得到Mo的微尖阵列 ,制成了分布串联横向电阻Spindt型FEA。最后得到了常规条件下可测量的场发射
A new type of manufacturing process of Spindt type FEA with series resistance is proposed. Various layers of electrodes, insulating layers and FEA resistor layers were prepared by sputtering. Using magnetic enhancement reactive ion etching equipment, the Mo thin film electrode pattern and the diameter of 1 μm, the depth of 1 μm SiO 2 circular hole. Using electron beam dual-source evaporation equipment, Al and Mo thin films were evaporated to obtain a micro-tip array of Mo to make a distributed Spindt-type FEA in series resistance. Finally, we get the measurable field emission under normal conditions