半导体的无辐射俄歇复合有时受电场的影响。不仅受外场而且也受内场(表面场,p-n结电场)的影响,因此我们计算了这种场(以均匀场处理)的影响。利用微扰理论,电场中Bloch电子是非微扰系统,而引起Auger跃迁的电子-电子相互作用被认 Semiconductor non-radiative Auger recombination is sometimes affected by the electric field. We are not only affected by the external field but also by the internal field (surface field, p-n junction electric field), so we calculated the effect of this field (with uniform field treatment). Using the perturbation theory, the Bloch electrons in the electric field are non-perturbative systems, and the electron-electron interactions that cause Auger transitions are recognized