论文部分内容阅读
基于k·p微扰理论框架,研究建立了单轴张/压应变Si,Si基双轴应变p型金属氧化物半导体(PMOS)反型层空穴量子化有效质量与空穴面内电导率有效质量模型.结果表明:对于单轴应力PMOS,选择单轴压应力可有效增强器件的性能;同等增强PMOS空穴迁移率,需要施加的单轴力强度小于双轴力的强度;在选择双轴应力增强器件性能时,应优先选择应变Si1-x Ge x作为沟道材料.所获得的量化理论结论可为Si基及其他应变器件的物理理解及设计提供重要理论参考.
Based on the k · p perturbation theoretical framework, the quantum effective mass of the uniaxially stretched / compressively strained p-type bismuth-p-type metal oxide semiconductor (PMOS) hole and the hole in-plane conductivity The results show that the uniaxial compressive stress can effectively enhance the device performance for uniaxial stress PMOS. For the same enhancement of the hole mobility of PMOS, the uniaxial strength to be applied is less than that of biaxial force. Axial stress should enhance the performance of the device, and strain Si1-xGex should be the preferred channel material.The conclusions of the quantitative theory obtained can provide important theoretical references for the physical understanding and design of Si-based and other strain devices.