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实验采用射频磁控溅射工艺,在较低的衬底温度(370℃)、纯Ar气氛中和在(111)Pt/Ti/S iO2/S i衬底上用陶瓷靶Pb(Zr0.52Ti0.48)O3(PZT)制备具有完全钙钛矿结构的多晶PZT(52/48)铁电薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性,然后在大气环境中对沉积的PZT薄膜进行快速热退火处理。用电感耦合等离子体原子发射光谱(ICP-AES)和Auger电子能谱(AES)测量其组分,X射线衍射仪(XRD)分析PZT薄膜的相结构和结晶取向,RT66A标准铁电测试系统分析Pt/PZT/Pt/Ti/S iO2/S i电容器的电学特性。结果表明:PZT铁电薄膜具有较高的剩余极化(Pr=44.9μC/cm2)和低的漏电流(10-8A量级)。
In this experiment, a radio frequency magnetron sputtering process was used to fabricate Pb (Zr0.52Ti0) ceramics at low substrate temperature (370 ℃), pure Ar atmosphere and (111) Pt / Ti / .48) O3 (PZT) A polycrystalline PZT (52/48) ferroelectric thin film with a completely perovskite structure was prepared. The substrate was subjected to 15 ° rocking during deposition to improve the film thickness uniformity. The deposited PZT thin film was subjected to rapid thermal annealing. The composition of the PZT thin films was analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES) and Auger electron spectroscopy (AES). The phase structure and orientation of the PZT thin films were analyzed by X-ray diffraction (XRD) The electrical characteristics of Pt / PZT / Pt / Ti / Si02 / Si capacitors were analyzed. The results show that the PZT ferroelectric thin film has higher residual polarization (Pr = 44.9μC / cm2) and low leakage current (10-8A magnitude).