据《Semiconductor FPD World》2003年第12期报道,美国IBM公司开发了超薄型SiGe双极晶体管(HBT)。该HBT与原技术相比,半导体芯片性能提高4倍以上,而功耗却降低了80%。该器件新的设计手段是在超薄型SOI圆片上制作SiGe双极芯片。图1是在SOI圆 According to “Semiconductor FPD World” 2003 the twelfth report reported that the United States IBM company developed an ultra-thin SiGe bipolar transistor (HBT). Compared with the original technology, the HBT improves the performance of the semiconductor chip by more than 4 times and reduces the power consumption by 80%. The device’s new design approach is to fabricate SiGe bipolar chips on ultra-thin SOI wafers. Figure 1 is the SOI circle