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本文介绍消除CMOS电路闭锁效应的几种方法:第一、减少寿命,起初,使用掺金的办法来降低少数载流子寿命,后来Sakai等采用本征吸杂办法;第二、改进版图设计;增加n沟器件与p沟器件之间的距离,以及采用保护环结构,均有助于消除闭锁效应;第三、介质隔离,即局部介质隔离和完全介质隔离;第四、用深阱或反阱增大阱的剖面;第五、采用外延结构。
This article describes several ways to eliminate the blocking effect of CMOS circuits: First, reduce the life expectancy, at first, the use of gold-doped approach to reduce minority carrier life, and later Sakai and other methods using intrinsic sinking; second, to improve the layout design; Increase the distance between the n-channel device and the p-channel device, and use a guard ring structure to help eliminate the blocking effect; thirdly, dielectric isolation, that is, local dielectric isolation and complete dielectric isolation; fourthly, Well to increase the cross-section of the trap; Fifth, the use of epitaxial structure.