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在１１００℃恒温氧化条件下，研究了稀土氧化物ＣｅＯ２，Ｇｄ２Ｏ３对ＮｉＡｌ基上形成的α－Ａｌ２Ｏ３膜的生长速率及其粘附性等氧化动力学参数的影响，并在此基础上采用ＳＩＭＳ测量二次离子流强度与阻止电压曲线方法，研究了Ａｌ２Ｏ３膜内及Ａｌ２Ｏ３／ＮｉＡｌ基界面处Ａｌ、Ｎｉ原子间结合能的变化规律。实验结果表明，稀土氧化物存在于氧化膜的晶界等处，具有促进氧化膜的晶粒间“微烧结”作用而提高了原子间的结合能。同时，还从稀土氧化物的化学性质出发，研究了稀土氧化物种类对氧化动力学产生不同影响的作用机制。
The effects of rare earth oxide CeO2 and Gd2O3 on the oxidation kinetics parameters such as the growth rate and the adhesion of α-Al2O3 film formed on NiAl-based films were investigated under 1100 ℃ constant temperature. Based on this, the SIMS measurements The secondary ion current intensity and the inhibition voltage curve method were used to investigate the variation of the binding energy between Al and Ni atoms in the Al2O3 film and at the interface between Al2O3 and NiAl. The experimental results show that rare earth oxides exist at the grain boundaries of the oxide film and have the effect of promoting the “micro-sintering” between the grains of the oxide film and increasing the binding energy between the atoms. At the same time, starting from the chemical properties of rare earth oxides, the effects of rare earth oxide species on the oxidation kinetics have different mechanisms of action.