We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits, depletion-type Si ring modulator, Ge photodetector, temperature sensor, on-chip heater, and temperature controller, all monolithic
Transition radiation (TR) induced by electron–matter interaction usually demands vast accelerating voltages, and the radiation angle cannot be controlled. Here we present a mechanism of direction controllable inverse transition radiation (DCITR) in a grap
Small molecule organic solar cells (OSCs) with the structure of indium tin oxide (ITO)/molybdenum trioxide (MoO3) (5 nm)/rubrene (x nm)/fullerene (C70) (y nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) (6 nm)/aluminum (Al