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研究了应用双边C-V法测量超浅结(如p+-n结)的掺杂分布。推导了在已知p+-n结的电容-电压(C-VR)关系、n区掺杂、以及热平衡下n区耗尽层宽度(xn0)的情况下计算p区掺杂浓度分布的公式。xn0是计算p区掺杂分布所需的一个关键参数,通过将n区掺杂设计成阶梯状,可实现对xn0的精确提取。用Medici对具有相同的阶梯状掺杂n区的p+-n和n-肖特基结进行器件仿真可得其C-VR关系。运用常规C-V法,由肖特基结的C-VR关系可提取出n区掺杂浓度。实现了对xn0的精确提取,其精度达1.8nm。基于精确的xn0,运用双边C-V法提取的p+区的掺杂浓度分布与Medici仿真结果非常吻合。
The doping distribution of ultra-shallow junctions (such as p + -n junctions) was measured by the bilateral C-V method. The formula for calculating the p-region doping concentration distribution is deduced with the known capacitance-voltage (C-VR) relationship of p + -n junction, n-region doping and n-region depletion layer width (xn0) under thermal equilibrium. xn0 is a key parameter needed to calculate the p-region doping profile. Accurate extraction of xn0 can be achieved by designing n-region doping as a staircase. The device simulation of p + -n and n-Schottky junctions with the same stepped n-region using Medici gives their C-VR relationship. Using conventional C-V method, n-region doping concentration can be extracted from the C-VR relationship of Schottky junction. The precise extraction of xn0 is achieved with an accuracy of 1.8nm. Based on the accurate xn0, the doping concentration distribution of p + region extracted by bilateral C-V method is in good agreement with the results of Medici simulation.