葡萄牙新里斯本大学科学与技术系材料研究中心的埃尔维拉·福图纳多及其同事,第一次使用一种纸质“介质”层制作出了场效应管(FET)。这个新装置的电气性能可与真正顶尖的、基于氧化物的薄膜晶体管(TFT)相媲美,而薄膜晶体管通常制作于玻璃或结晶硅衬底上。 For the first time, Elvira Fortunato and colleagues at the Center for Materials Science and Technology at the University of Lisbon, Portugal, fabricated a field-effect transistor (FET) using a paper-based “dielectric” layer. The electrical performance of this new device is comparable to a true-to-the-top oxide-based thin-film transistor (TFT), which is typically fabricated on glass or crystalline silicon substrates.