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不断加热富硅SiC(0001)样品,分别用低能电子衍射(LEED)仪,扫描隧道显微镜(STM)观察,当加热到950℃时,出现SiC(0001)(3×3)R30°重构面的LEED和STM图样.利用X射线光电子能谱仪,记录发自SiC(0001)(3×3)R30°结构的角分辨X射线光电子能谱(XPS).采用最小二乘法,对内层能级的能量进行解旋,使其与实验数据拟合.分析实验结果,得出SiC(0001)(3×3)R30°结构中Si2p和C1s的能态结构,并与体内的Si2p和C1s的能态进行比较,得出表面Si2p态的能量漂移,进而发现SiC(0001)(3×3)R30°重构面仅由硅原子形成.
The SiC (0001) (3 × 3) R30 ° reconstructed surface was observed when heated to 950 ℃ by low energy electron diffraction (LEED) and scanning tunneling microscope (STM) The LEED and STM patterns were recorded.The angular resolution X-ray photoelectron spectroscopy (XPS) recorded from the SiC (0001) (3 × 3) R30 ° structure was recorded by X-ray photoelectron spectroscopy Level energy is fitted to the experimental data, and the experimental results show that the energy states of Si2p and C1s in SiC (0001) (3 × 3) R30 ° structure are in agreement with those of Si2p and C1s The energy shifts of the surface Si2p states are obtained by comparing the energy states of the SiC (0001) (3 × 3) R30 ° planes, which are only formed by silicon atoms.