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日本通产省为强化2000年半导体制造装置厂家在国际上的竞争力,正着手研制开发超高集成电子器件所需的新技术.为制作线宽100nm级的下一代半导体产品,目标将确立使用F_2准分子激光器的新光刻技术和成为新原理材料加工技术的离子束技术.(No.21)
In order to strengthen the international competitiveness of manufacturers of semiconductor manufacturing equipment in 2000, MIT developed the new technologies required for the development of ultra-high-integrated electronic devices. The goal is to establish the next-generation semiconductor products with a line width of 100nm F_2 excimer laser lithography and become a new principle of material processing technology ion beam technology. (No. 21)