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研究了566～715℃温度范围内 InP 中 Cd 和 Zn 的扩散问题。采用由 Cd_3P_2和 InP 粉末为混合源的 Cd 扩散,使我们能得到几微米以下的浅扩散深度(X_j),并形成无表面损伤的平坦的 p-n 结。另一方面采用包括 Zn_3P_2(或ZnP_2)+InP 粉末为混合源的 Zn 扩散为快速扩散,结果造成扩散前沿不平整。当采用磷硅玻璃(PSG)掩膜进行 InP 的选择扩散时,如果扩散时石英管中的 InP 粉末量不足(≤100mg),发现沿掩膜边缘会产生滑移位错。还进行了与 InP 晶格匹配的 InGaAsP(E_g=0.95～1.35eV)中的 Cd 扩散研究工作。业已发现扩散深度随着带隙能量的减小而单调减小。
The diffusion of Cd and Zn in InP at 566 ~ 715 ℃ was investigated. Using Cd diffusion from a mixed source of Cd 3 P 2 and InP powders enables us to obtain shallow diffusion depths (X_j) of a few microns or less and to form flat p-n junctions without surface damage. On the other hand, Zn diffusion, which includes Zn_3P_2 (or ZnP_2) + InP powder as the hybrid source, is rapidly diffused. As a result, the diffusion front is uneven. Sliding dislocations were found along the edge of the mask when the amount of InP powder in the quartz tube was insufficient (≤100 mg) to diffuse InP using a Phosphosilicate Glass (PSG) mask. Cd diffusion studies in InGaAsP (E_g = 0.95 ~ 1.35eV) lattice-matched with InP were also performed. It has been found that the diffusion depth decreases monotonically as the bandgap energy decreases.