在硅台面整流二极管的生产中,常常用点黑蜡、长时间腐蚀的办法把管芯一个个分割开,同时形成合适的台面.这种工艺对硅单晶的利用率和生产效率都很低.我们总结了高频高压硅堆的生产工艺,提出了热浸镀铅锡-机械切割法分割管芯的工艺.这大大提高了硅单晶的利用率和生产效率,降低了成本,取得了一定的经济效益. Silicon in the production of rectifier diodes, often with a little black wax, long time corrosion of the way to separate the die one by one, while forming a suitable countertops.This process of silicon single crystal utilization and production efficiency is very low We summarize the production process of high frequency and high voltage silicon reactor and propose the process of hot dip tin plating and mechanical cutting to separate the die, which greatly improves the utilization rate and production efficiency of silicon single crystal, reduces the cost and achieves Certain economic benefits.