在自由式微结构如束、振动膜和过载传感器的制造过程中，经常遇到的一个难题是分离开粘连在衬底上的微结构。这种现象出现在牺牲腐蚀工艺完成后晶片干燥期间。另外，牺牲层的腐蚀通常是器件制作的最后一步，故这类芯片中的ＣＭＯＳ电路必须采取保护措施。建议在第一道加工工序中，即紧随结构层的淀积，就进行牺牲层的腐蚀，那么最后一道工序就是已分离的结构层的干法刻制，这样既不会发生粘连又不需要进行ＣＭＯＳ电路的特殊保护 In the manufacture of free-standing microstructures such as beams, vibrating membranes, and overload sensors, a common challenge is separating the microstructures that are stuck to the substrate. This phenomenon occurs during the wafer drying after the sacrificial etch process is completed. In addition, sacrificial layer corrosion is usually the last step in device fabrication, so the CMOS circuitry in such chips must take protective measures. It is recommended that the sacrificial layer be etched in the first processing step, immediately following the deposition of the structural layer, so that the last step is the dry etching of the separated structural layer so that neither adhesion nor the need for adhesion Special protection for CMOS circuits