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采用射频磁控溅射法在室温玻璃衬底上成功地制备出了铟镓锌氧(In-Ga-Zn-O)透明导电薄膜。研究了不同溅射功率对In-Ga-Zn-O薄膜结构、电学和光学性能的影响。X射线衍射(XRD)表明,在80～150 W溅射功率范围内,In-Ga-Zn-O薄膜为非晶结构。随着溅射功率的增加,生长速率成线性增加,电阻率逐渐降低。透射光谱显示在350 nm附近出现较陡的吸收边缘,说明In-Ga-Zn-O薄膜在以上溅射功率范围内具有良好的薄膜质量。光学禁带宽度随着溅射功率增加而减小。In-Ga-Zn-O薄膜在500～800 nm可见光区平均透过率超过90%。
Indium gallium zinc oxide (In-Ga-Zn-O) transparent conductive film was successfully prepared by RF magnetron sputtering on a glass substrate at room temperature. The effects of different sputtering powers on the structure, electrical and optical properties of In-Ga-Zn-O thin films were investigated. X-ray diffraction (XRD) showed that the In-Ga-Zn-O thin film was amorphous in the range of 80-150 W sputtering power. With the increase of sputtering power, the growth rate increases linearly and the resistivity decreases gradually. The transmission spectrum shows a steeper absorption edge near 350 nm, indicating that the In-Ga-Zn-O film has a good film quality over the sputtering power range above. The optical band gap decreases as the sputtering power increases. In-Ga-Zn-O film in the 500 ~ 800 nm in the visible region of the average transmittance of more than 90%.