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采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系In-AlGaAs材料性质进行了表征。摇摆曲线结果表明,根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配.光致发光和霍尔测试结果显示随着Al组分的增加,样品的光致发光强度、电子浓度和迁移率均有所下降.样品的三族元素组分由光致发光及X射线衍射实验获得,测试结果与设计值吻合,Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法.
Quaternary In-AlGaAs materials grown by gas source molecular beam epitaxy were characterized by high-resolution X-ray diffraction rocking curves, photoluminescence and Hall test. The results of rocking curves show that the InAlGaAs samples grown on the basis of the calculated data basically match the InP substrate.The results of photoluminescence and Hall test show that the photoluminescence intensity, electron concentration and mobility of the samples increase with the increase of Al composition Decreased.The samples of the three groups of elements from the photoluminescence and X-ray diffraction experiment obtained, the test results and the design value of the Al component of the experimental design value and test results provide a practical and precise control group Method of dividing.