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采用熔融态的KOH对AlGaInP基红光LED外延片进行了表面粗化处理。研究了粗化温度、粗化时间对LED外延片表面形貌的影响,并利用原子力显微镜(AFM)、半导体芯片自动测试系统对LED器件的相关性能(形貌、I-V特性曲线、亮度和主波长)进行了表征。比较了粗化前后的LED亮度和电流特性变化。测试结果表明:利用熔融态的KOH对AlGaInP基红光LED外延片进行表面粗化可以有效地抑制光在通过LED表面与空气接触界面时产生的全反射,得到性能更好的器件。实验结果显示,采用熔融态KOH,在粗化温度为200℃、粗化时间为8min时,能使制作的红光LED外延片发光效率提高30%。
AlGaInP-based red LED epitaxial wafers were surface roughened using KOH in molten state. The effects of roughening temperature and roughening time on the surface morphology of LED epitaxial wafers were investigated. Atomic force microscope (AFM) and semiconductor chip automatic test system were used to test the performance of LED devices (morphology, IV characteristic curve, brightness and dominant wavelength ) Was characterized. The changes in LED brightness and current characteristics were compared before and after roughening. The results show that the surface roughness of the AlGaInP-based red LED epitaxial wafer can be effectively suppressed by using KOH in the molten state, which can effectively suppress the total reflection when the light passes through the interface of the LED and the air and obtain a better performance device. The experimental results show that with the KOH melt state, the roughening temperature is 200 ℃ and the roughening time is 8min, the luminous efficiency of the fabricated red LED epitaxial wafers can be increased by 30%.