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通过在重掺硼硅(p+-Si)衬底上溅射SnO2薄膜并在O2气氛下800℃热处理形成SnO2/p+-Si异质结.基于该异质结的器件可在低电压(电流)驱动下电致发光.进一步地,通过在SnO2薄膜上增加TiO2盖层,使器件的电致发光获得显著增强.这是由于TiO2盖层的引入,一方面使SnO2薄膜更加致密,减少了非辐射复合中心;另一方面TiO2较大的折射率和合适的厚度使SnO2薄膜电致发光的出光效率得到提高.
The SnO2 / p + -Si heterojunction is formed by sputtering a SnO2 thin film on a heavily boron doped silicon (p + -Si) substrate and heat-treating it in an O2 atmosphere at 800 ° C. Devices based on this heterojunction can be fabricated at low voltage (current) Driven electroluminescence.Furthermore, by adding TiO2 cap layer on the SnO2 thin film, the electroluminescence of the device is significantly enhanced.This is due to the introduction of the TiO2 cap layer, on the one hand makes the SnO2 thin film more compact, reducing non-radiation Composite center; the other hand, TiO2 larger refractive index and the appropriate thickness of SnO2 thin film electroluminescence efficiency is improved.