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研究了利用低压 MOVPE宽条 (15μm )选区外延生长 In Ga As P的性质 .研究了生长速率、厚度增强因子、带隙调制、组分调制随着生长条件如掩模宽度、生长压力、 族源流量的变化规律 ,给出了合理的解释 .同时研究了不同 / 比下选择性生长 In Ga As P表面尖角的性质 .
The properties of In Ga As P epitaxially grown by the low voltage MOVPE wide strip (15 μm) are studied.The growth rate, thickness enhancement factor, band gap modulation and composition modulation are studied with the growth conditions such as mask width, growth pressure, The law of the flow rate is given, and a reasonable explanation is given.At the same time, the properties of surface sharpness of In Ga As P at different ratio are studied.