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以单晶硅(111)作为研究对象,选用注入剂量为8×1015ions／cm2,注入能量分别为50,80和120 keV的C+注入方法对单晶硅片进行离子注入．利用原位纳米力学测试系统对C+注入前后硅片的纳米硬度和弹性模量进行测定,在UMT-2型微摩擦试验机上对C+注入前后硅片开展往复滑动微摩擦实验,研究其摩擦系数和声发射信号的变化,采用T-1000型表面轮廓仪测量C+注入前后硅片的磨损量,利用S-3000N型扫描电子显微镜表征C+注入前后硅片的磨损机理．结果表明,C+注入能量为50 keV硅片的纳米硬度和弹性模量大幅减小,而其他2种注入能量的纳米硬度和弹性模量与单晶硅相差较小;C+注入后硅片的减摩效果得到了提高,在小载荷下其摩擦系数大幅度降低,但在载荷达到一定值后,摩擦系数和声发射信号会迅速增加并且产生磨痕;注入能量为120 keV的硅片的减摩效果最佳,注入能量为80 keV和120 keV的硅片的抗磨性能较好;C+注入前后单晶硅片的磨损形貌在小载荷下以黏着磨损为主．
Single crystal silicon (111) was selected as the research object. Single crystal silicon wafers were ion implanted by C + implantation with implantation dose of 8 × 10 15 ions / cm 2 and implantation energies of 50, 80 and 120 keV respectively. The in-situ nanomechanical test system was used to measure the nano-hardness and elastic modulus of the silicon wafers before and after C + implantation. The reciprocating sliding micro-friction experiments were carried out on the UMT-2 micro-tribometer before and after C + implantation. The change of acoustic emission signal was measured by T-1000 surface profilometer before and after C + implantation. The wear mechanism of silicon wafers before and after C + implantation was characterized by S-3000N scanning electron microscope. The results show that the nanohardness and elastic modulus of silicon wafers with 50 keV C + implantation energy decrease significantly, while the other two kinds of implantation energies have slightly smaller nanocrystalline hardness and elastic modulus than that of silicon single crystal. The friction coefficient and the acoustic emission signal increase rapidly and produce wear marks after the load reaches a certain value. The friction coefficient of silicon wafer with energy of 120 keV is reduced The results show that the silicon wafers with energy of 80 keV and 120 keV have better wear resistance. The wear morphology of silicon wafers before and after C + implantation is mainly adhesive wear under light load.