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用小电流、特殊配比溶液的电化学阳极腐蚀法在p型、〈10 0〉晶向、0 0 1Ω·cm电阻率的硅片制备了大面积纳米硅薄膜 .通过SEM ,TEM ,XRD和Raman光谱技术分析薄膜颗粒的微细结构 .实验结果表明该纳米硅薄膜由直径为10～ 2 0nm ,晶向一致的颗粒紧密排列而成 ,具有很好的物理化学稳定性 .系统研究了薄膜结构特征和溶液配比、腐蚀时间、腐蚀电流密度的关系 .成功观察到该薄膜具有很好的场发射特性 ,在 0 1μA/cm2 电流密度下 ,其开启电场为 3V/ μm ,接近碳纳米管的 1 1V/ μm .
Large area nanostructured silicon thin films were fabricated on silicon wafers with a resistivity of 0 0 1 Ω · cm in a p-type, <10 0> crystal orientation by electrochemical anodic etching at a low current and a specific ratio. SEM, TEM, XRD, Raman spectroscopy was used to analyze the microstructure of the thin film. The experimental results show that the thin film is composed of 10 ~ 20 nm diameter particles with close crystal orientation and has good physical and chemical stability. And the relationship between the solution ratio, etching time and corrosion current density, the field emission characteristics of this film have been successfully observed. At 0 1μA / cm2 current density, the turn-on electric field is 3V / μm, which is close to 1 1V / μm.