首先综述了相变材料等离子体刻蚀技术的研究进展,然后讨论了影响相变材料等离子体刻蚀的主要工艺参数,如线圈功率、腔体气压、偏压、刻蚀气体及气体比例等,进而解释了工艺参数与刻蚀结果的依赖关系。同时采用多种分析手段,对相变材料在等离子体刻蚀工艺中产生的刻蚀损伤进行了分类和表征,并基于该分析结果提出了工艺优化方案。最后总结了相变材料等离子体刻蚀技术的反应机理,相变材料的刻蚀是自发反应与离子辅助化学反应相结合的过程,同时物理溅射与低挥发性产物的离子激发脱附也起着重要的辅助作用。 Firstly, the research progress of plasma etching technology of phase change material is reviewed. Then, the main process parameters affecting the plasma etching of phase change material, such as coil power, cavity pressure, bias voltage, etching gas and gas ratio, Which explains the dependence of process parameters and etching results. At the same time, a variety of analytical methods are used to classify and characterize the etching damage caused by the phase change material in the plasma etching process. Based on the analysis results, a process optimization scheme is proposed. Finally, the reaction mechanism of phase-change material plasma etching is summarized. The etching of phase-change material is a combination of spontaneous reaction and ion-assisted chemical reaction. Meanwhile, ion sputtering of physical sputtering and low volatility also desorbs An important supporting role.